中文

Chinese Journal of Nature ›› 2011, Vol. 33 ›› Issue (1): 42-45.

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Application and Development of SiC Materials and Devices

WANG Shou-guo①③, ZHANG Yan②   

  1. ①Associate Professor, ②Professor，Department of Electronic and Information Engineering, Shenzhen Graduate School，Harbin Institute of Technology，Shenzhen 518055，China； ③School of Information Science and Technology, Northwest University, Xi’an 710127, China
  • Received:2010-10-26 Revised:2010-12-20 Online:2011-02-20 Published:2010-02-20

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Abstract: SiC material is the third generation semiconductor material, which is limited for export by other country for its being used in military field. In this paper, the basic characteristics of SiC materials are introduced firstly. The grow methods of SiC chips and the manufacture corporations are summarized. The emphasis is on the development of SiC chips in China. The application areas of SiC devices and the prospect of the market are given lastly. The industrial chain of the fabrication, application of the SiC material and devices should be constructed in China.

Key words: SiC, , semiconductor device, material, chip, progress