自然杂志 ›› 2024, Vol. 46 ›› Issue (6): 444-447.doi: 10.3969/j.issn.0253-9608.2024.05.015

• 科学创造未来 • 上一篇    下一篇

第四代半导体浅析

朱宏伟   

  1. 清华大学 材料学院,北京 100084
  • 收稿日期:2024-09-22 出版日期:2024-12-25 发布日期:2024-12-22
  • 基金资助:
    国家自然科学基金面上项目(52172046)

A brief perspective of fourth-generation semiconductors

ZHU Hongwei   

  1. School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
  • Received:2024-09-22 Online:2024-12-25 Published:2024-12-22

摘要: 与前三代半导体相比,第四代半导体不仅在材料种类上实现突破,更在性能上实现质的飞跃,在诸多领域展现出巨大的应用潜力。文章概述了第四代半导体的定义、分类、核心优势、应用领域与前景,并指出其面临的挑战。

关键词: 第四代半导体, 超宽禁带, 超窄禁带, 金刚石, 氧化镓

Abstract: Compared with the first three generations of semiconductors, the fourth-generation semiconductors have not only achieved breakthroughs in material types but also made a qualitative leap in performance, showing great application potential in multiple fields. This article outlines the definition, classification, core advantages, application fields, and prospects of fourth-generation semiconductors, and points out the challenges they face.