第四代半导体浅析

朱宏伟

doi:10.3969/j.issn.0253-9608.2024.05.015

自然杂志 >

2024 , Vol. 46 >Issue 6: 444 - 447

DOI: https://doi.org/10.3969/j.issn.0253-9608.2024.05.015

科学创造未来

第四代半导体浅析

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清华大学材料学院，北京 100084

朱宏伟，研究方向：低维材料。

收稿日期: 2024-09-22

网络出版日期: 2024-12-22

基金资助

国家自然科学基金面上项目(52172046)

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A brief perspective of fourth-generation semiconductors

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School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

Received date: 2024-09-22

Online published: 2024-12-22

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摘要

与前三代半导体相比，第四代半导体不仅在材料种类上实现突破，更在性能上实现质的飞跃，在诸多领域展现出巨大的应用潜力。文章概述了第四代半导体的定义、分类、核心优势、应用领域与前景，并指出其面临的挑战。

关键词： 第四代半导体; 超宽禁带; 超窄禁带; 金刚石; 氧化镓

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朱宏伟 . 第四代半导体浅析[J]. 自然杂志, 2024 , 46(6) : 444 -447 . DOI: 10.3969/j.issn.0253-9608.2024.05.015

Abstract

Compared with the first three generations of semiconductors, the fourth-generation semiconductors have not only achieved breakthroughs in material types but also made a qualitative leap in performance, showing great application potential in multiple fields. This article outlines the definition, classification, core advantages, application fields, and prospects of fourth-generation semiconductors, and points out the challenges they face.

参考文献

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[2] WONG M H, BIERWAGEN O, KAPLAR R J, et al. Ultrawidebandgap semiconductors: an overview [J]. Journal of Materials Research, 2021, 36(23): 4601-4615.
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[5] 朱宏伟. 6G时代的新材料[J]. 自然杂志, 2023, 45(2): 109-112.

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