巨磁电阻效应

自然杂志 ›› 2007, Vol. 29 ›› Issue (6): 322-327.

巨磁电阻效应

吴镝①，都有为②

①教授，②中国科学院院士，南京大学物理系，固体微结构国家重点实验室，南京 210093

收稿日期:2007-09-30 修回日期:2007-10-30 出版日期:2007-12-20 发布日期:2007-12-20

Principle of Giant Magnetoresistance Effect and Its Applications

WU Di ①，DU You-wei②

①Professor，②CAS Member,National Laboratory of Solid State Structures,Najing University,Najing 210093,China

Received:2007-09-30 Revised:2007-10-30 Online:2007-12-20 Published:2007-12-20

摘要/Abstract

摘要： 巨磁电阻效应的发现不仅在科学上具有重要的意义，而且促进了磁存储技术的革新，使得电子的自旋自由度第一次被应用到人们的生活中。之后，研究各种材料中的自旋性质的新学科“自旋电子学”由此产生。

关键词: 巨磁电阻, 隧道磁电阻, 自旋电子学。

Abstract: The discovery of giant magnetoresistance effect (GMR) is not only very important in science, but ignites the technical innovation of the magnetic storage. It is the first time that the spin degree of freedon was widespread use in everbody's life.The new field of spintonics which studies the spin properties of all kinds of material after the discovery of GMR was opened.

Key words: giant magnetoresistance, tunneling magnetorsistance,spintronics

吴镝;都有为. 巨磁电阻效应[J]. 自然杂志, 2007, 29(6): 322-327.

WU Di;DU You-wei. Principle of Giant Magnetoresistance Effect and Its Applications[J]. Chinese Journal of Nature, 2007, 29(6): 322-327.