SIC材料及器件的应用发展前景

自然杂志 ›› 2011, Vol. 33 ›› Issue (1): 42-45.

SIC材料及器件的应用发展前景

王守国^①③，张岩^②

①副教授，②教授，哈尔滨工业大学深圳研究生院电子与信息工程学科部，深圳 518055；③西北大学信息与技术学院，西安 710127

收稿日期:2010-10-26 修回日期:2010-12-20 出版日期:2011-02-20 发布日期:2010-02-20

Application and Development of SiC Materials and Devices

WANG Shou-guo^①③, ZHANG Yan^②

①Associate Professor, ②Professor，Department of Electronic and Information Engineering, Shenzhen Graduate School，Harbin Institute of Technology，Shenzhen 518055，China； ③School of Information Science and Technology, Northwest University, Xi’an 710127, China

Received:2010-10-26 Revised:2010-12-20 Online:2011-02-20 Published:2010-02-20

摘要/Abstract

摘要： SiC材料是第三代半导体材料，由于可用于军事领域，国外限制该产品的出口。作者首先阐述了SiC 材料的基本特性，介绍了SiC晶体的生长技术及晶体供应商，尤其是国内SiC晶体材料的研制现状，最后评述SiC器件的应用领域和市场前景，并指出中国应建立SiC材料及器件研制和应用的产业链。

关键词: SiC, 半导体器件, 材料, 晶片, 工艺

Abstract: SiC material is the third generation semiconductor material, which is limited for export by other country for its being used in military field. In this paper, the basic characteristics of SiC materials are introduced firstly. The grow methods of SiC chips and the manufacture corporations are summarized. The emphasis is on the development of SiC chips in China. The application areas of SiC devices and the prospect of the market are given lastly. The industrial chain of the fabrication, application of the SiC material and devices should be constructed in China.

Key words: SiC, , semiconductor device, material, chip, progress

王守国, 张岩 . SIC材料及器件的应用发展前景[J]. 自然杂志, 2011, 33(1): 42-45.

WANG Shou-guo, ZHANG Yan. Application and Development of SiC Materials and Devices[J]. Chinese Journal of Nature, 2011, 33(1): 42-45.

导出引用管理器 EndNote|Reference Manager|ProCite|BibTeX|RefWorks

链接本文: https://www.nature.shu.edu.cn/CN/

https://www.nature.shu.edu.cn/CN/Y2011/V33/I1/42

[1]	郭晓强, 李岩异. RNA研发简史：从微不足道到无比重要[J]. 自然杂志, 2022, 44(6): 480-490.
[2]	王守国;张岩. 利用离子注入技术制备新型结构SiC器件的展望[J]. 自然杂志, 2011, 33(4): 211-215.